Hybrid power module

A power module comprising:

• a first power switching terminal and a second power switching terminal;
• and
• a plurality of power semiconductor devices, the plurality of power semiconductor devices comprising:
• at least one insulated gate bipolar transistor (IGBT);
• at least one metal-oxide-semiconductor field-effect transistor (MOSFET);
• and
• at least one diode, wherein:
• the at least one IGBT comprises a number of IGBT semiconductor die and the at least one diode comprises a different number of diode semiconductor die than the number of IGBT semiconductor die;
• the at least one MOSFET comprises a number of MOSFET semiconductor die that is greater than the number of IGBT semiconductor die;
• the at least one IGBT and the at least one diode are coupled in anti-parallel between the first power switching terminal and the second power switching terminal;
• and
• the at least one IGBT, the at least one MOSFET, and the at least one diode are silicon carbide semiconductor devices.

A power module comprising:

• a first power switching terminal, a second power switching terminal, and a control terminal;
• and
• a plurality of semiconductor die arranged in parallel between the first power switching terminal, the second power switching terminal, and the control terminal such that:
• the power module is configured to independently control the plurality of semiconductor die and selectively conduct current between the first power switching terminal and the second power switching terminal based on control signals provided at the control terminal;
• and
• a specific current rating of the power module in both forward current and reverse current directions is greater than 111064×Vb(r)−0.818 A/cm2, where Vb(r) is the rated blocking voltage of the power module.