Bulk-acoustic wave resonator
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsTae Yoon Kim, Won Han, Chang Hyun Lim
Life of this patent
Estimating the term…
Abstract
A bulk-acoustic wave resonator includes a substrate; a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on a cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a membrane layer formed below the lower electrode and forming the cavity together with the substrate; and a protruding portion formed on the membrane layer and further formed in the cavity in a direction that extends away from the membrane layer.
Claims21
A bulk-acoustic wave resonator comprising:
- a substrate;
- a lower electrode disposed on the substrate, and at least a portion of the lower electrode is disposed on a cavity;
- a piezoelectric layer disposed on the lower electrode;
- an upper electrode disposed on the piezoelectric layer;
- a membrane layer disposed below the lower electrode and forming the cavity together with the substrate;
- and
- a protruding portion formed on the membrane layer and formed into the cavity in a direction that extends away from the membrane layer.
A bulk-acoustic wave resonator comprising:
- a substrate;
- a seed layer, the substrate and the seed layer forming a cavity;
- a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on the cavity;
- a piezoelectric layer formed on the lower electrode;
- an upper electrode formed on the piezoelectric layer;
- and
- a protruding portion extended from the seed layer and formed in the cavity to face away from the seed layer.
A bulk-acoustic wave resonator comprising:
- a substrate;
- a lower electrode formed on the substrate;
- a piezoelectric layer formed on the lower electrode;
- an upper electrode formed on the piezoelectric layer;
- a membrane layer formed below the lower electrode and configured to form a cavity with the substrate;
- and
- a protruding portion formed on one or more ends of the membrane layer.
Dependencies are inferred from the claim text.