Method of manufacturing semiconductor laser element, and semiconductor laser device thereof and gas analyzer
AssigneeHoriba, Ltd.
InventorMakoto Matsuhama
Life of this patent
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Abstract
In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.
Claims8
A method of manufacturing a semiconductor laser element from a laminated structure formed on a substrate, comprising:
- laminating a predetermined number of semiconductor layers to be a light emitting region and semiconductor layers to be an injection region to form an active layer having a multiple quantum well structure including a plurality of well layers;
- etching the laminated structure to form a plurality of waveguides which are segmented in a lattice shape, a side surface along a longitudinal direction of each of the waveguides, and an end facet intersecting the longitudinal direction of each of the waveguides;
- forming a reflection film on an upper surface of each of the waveguides, on the side surface along the longitudinal direction, and on the end facet intersecting the longitudinal direction for reflecting light in each of the waveguides;
- and
- cleaving each of the waveguides formed with the reflection film, along a direction intersecting the longitudinal direction to form a light emitting surface for emitting light within each of the waveguides.
A semiconductor laser device including a substrate and a semiconductor laser element provided on the substrate, wherein the semiconductor laser element comprises:
- a waveguide composed of a part of a laminated structure formed on the substrate, and comprising an active layer having a multiple quantum well structure including a plurality of well layers, formed by laminating a predetermined number of semiconductor layers to be a light emitting region and semiconductor layers to be an injection region;
- and
- a reflection film continuously and integrally formed on a side surface along a longitudinal direction of the waveguide and on an end facet intersecting the longitudinal direction of the waveguide, and reflecting the light within waveguide.
A method of manufacturing a semiconductor laser element from a laminated structure formed on a substrate, comprising:
- etching the laminated structure to form a plurality of waveguides segmented in a lattice shape;
- forming a reflection film on a surface of each of the waveguides for reflecting light in each of the waveguides;
- and
- cleaving each of the waveguides formed with the reflection film along a direction intersecting a longitudinal direction to form a light emitting surface for emitting light within each of the waveguides such that a part of one of the waveguides adjacent in the longitudinal direction is formed as a remaining part corresponding to the other waveguide, wherein the remaining part is used as a temperature sensor for detecting a temperature of the semiconductor laser element.
Dependencies are inferred from the claim text.