Directly flat-attached switching component for active frequency selective surface and fabricating method thereof
AssigneeNational Chung Shan Institute of Science and Technology
InventorsJian-Long Ruan, Shyh-Jer Huang, Yang-Kuo Kuo
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Abstract
The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.
Claims18
A fabricating method for a switching component of a directly flat-attached active frequency selective surface (AFSS), the fabricating method comprising:
- (A) providing a dielectric substrate, and preparing a metal wire on the dielectric substrate;
- (B) fabricating an opening in the metal wire to expose the dielectric substrate;
- (C) preparing a high work function metal layer from a periphery of an end of the opening to a bottom of the end of the opening, wherein the dielectric substrate remains exposed at a bottom of another end of the opening;
- (D) preparing a P-type material layer on an upper surface of the high work function metal layer and a side of the high work function metal layer facing the another end of the opening, wherein the dielectric substrate still remains exposed at the bottom of the another end of the opening;
- (E) preparing an N-type material layer on an upper surface of the P-type material layer and a side of the P-type material layer facing the another end of the opening, wherein the dielectric substrate still remains exposed at the bottom of the another end of the opening;
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- (F) preparing a low work function metal layer from an upper surface of the N-type material layer to a periphery of the another end of the opening, wherein the low work function metal layer across the another end of the opening is mutually in contact with the N-type material layer, the dielectric substrate exposed at the bottom of the another end of the opening and the metal wire to form a PN diode switching component of the AFSS.
A switching component for a directly flat-attached active frequency selective surface (AFSS), wherein a fabricating method for the switching component comprising:
- (A) providing a dielectric substrate, and preparing a metal wire on the dielectric substrate;
- (B) fabricating an opening in the metal wire to expose the dielectric substrate;
- (C) preparing a high work function metal layer from a periphery of an end of the opening to a bottom of the end of the opening, wherein the dielectric substrate remains exposed at a bottom of another end of the opening;
- (D) preparing a P-type material layer on an upper surface of the high work function metal layer and a side of the high work function metal layer facing the another end of the opening, wherein the dielectric substrate still remains exposed at the bottom of the another end of the opening;
- (E) preparing an N-type material layer on an upper surface of the P-type material layer and a side of the P-type material layer facing the another end of the opening, wherein the dielectric substrate still remains exposed at the bottom of the another end of the opening;
- and
- (F) preparing a low work function metal layer from an upper surface of the N-type material layer to a periphery of the another end of the opening, wherein the low work function metal layer across the another end of the opening is mutually in contact with the N-type material layer, the dielectric substrate exposed at the bottom of the another end of the opening and the metal wire to form a PN diode switching component of the AFSS.
Dependencies are inferred from the claim text.