Flip-chip light emitting diode and manufacturing method thereof

A flip-chip light emitting diode comprising:

• a transparent substrate;
• a light-emitting epitaxial laminated layer having a first surface and a second surface opposing the first surface, and including a first semiconductor layer, an active layer and a second semiconductor layer;
• a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer and bonded with the transparent substrate;
• a first electrode and a second electrode respectively over a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer;
• wherein the transparent substrate has a thickness of less than 80 um;
• wherein the transparent bonding medium layer comprises at least one of Al2O3/SiO2, SiX/SiO2, SiNX/Al2O3/SiO2;
• wherein the transparent bonding medium layer is patterned, and comprises a high-refractivity transparent medium layer and a patterned transparent bonding layer, wherein:
• the high-refractivity transparent medium layer is over a surface of a p-type window layer;
• an upper surface of the high-refractivity transparent medium layer is provided with a grid-shaped or array-shaped recess region;
• and the patterned transparent bonding layer is filled in the recess region of the high-refractivity transparent medium layer, and having an upper surface at a same plane with the upper surface of the transparent medium layer.