Film of quantum dot, method for patterning the same and quantum dot light emitting device using the same
AssigneesFoundation of Soongsil University-Industry Cooperation, Sogang University Research & Business Development Foundation
InventorsMoon Sung Kang, Jeong Ho Cho, Jee Hye Yang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a quantum dot thin film that is formed by cross-linking ligands of quantum dots with a photo cross-linker containing two or more azide groups. According to still another aspect of the present disclosure, a method for forming a quantum dot pattern includes: forming a quantum dot layer on a substrate by coating the substrate with a solution including quantum dots and a photo cross-linker containing two or more azide groups; placing a mask having a pattern on the quantum dot layer and performing UV exposure on the quantum dot layer; and forming a quantum dot pattern by removing a non-exposed region of the quantum dot layer.
Claims9
A quantum dot thin film, comprising:
- quantum dots,
- wherein the quantum dots are linked by cross-linking ligands surrounding the quantum dots with a photo cross-linker containing two or more azide groups, and,
- wherein a distance between the quantum dots is increased by the ligands and the photo cross linker.
A substrate on which a quantum dot pattern is formed, comprising:
- a quantum dot thin film patterned with a first quantum dot pattern, a second quantum dot pattern, and a third quantum dot pattern on the substrate,
- wherein the quantum dot thin film includes quantum dots,
- wherein the quantum dots are surrounded by ligands,
- wherein the ligands surrounding the quantum dots are cross-linked by a photo cross-linker containing two or more azide groups, and,
- wherein a distance between the quantum dots is increased by the ligands and the photo cross linker.
Dependencies are inferred from the claim text.