Transition metal doped germanium-antimony tellurium (GST) memory device components and composition
AssigneeMicron Technology, Inc.
InventorsPaolo Fantini, Marco Bernasconi, Silvia Gabardi
Life of this patent
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Abstract
Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
Claims20
A composition of matter, comprising:
- germanium in an amount ranging from 15 atomic percent (at. %) to 30 at. % of the composition;
- antimony in an amount ranging from 10 at. % to 40 at. % of the composition;
- tellurium in an amount ranging from 40 at. % to 65 at. % of the composition;
- and
- at least one element selected from a group comprising yttrium and scandium, the at least one element in an amount less than or equal to 7 at. % of the composition.
An apparatus, comprising:
- a first access line;
- a second access line;
- and
- a first memory cell coupled with the first access line and the second access line, wherein the first memory cell comprises a chalcogenide material, and wherein a composition of the chalcogenide material comprises:
- germanium in an amount ranging from 15 atomic percent (at. %) to 30 at. % of the composition;
- antimony in an amount ranging from 10 at. % to 40 at. % of the composition;
- tellurium in an amount ranging from 40 at. % to 65 at. % of the composition;
- and
- at least one element selected from a group comprising yttrium and scandium, the at least one element in an amount less than or equal to 7 at. % of the composition.
A method, comprising:
- selecting, for a memory operation, a memory cell comprising a memory element, the memory element having a composition comprising:
- germanium in an amount ranging from 15 atomic percent (at. %) to 30 at. % of the composition;
- antimony in an amount ranging from 10 at. % to 40 at. % of the composition;
- tellurium in an amount ranging from 40 at. % to 65 at. % of the composition;
- and
- at least one element selected from a group comprising yttrium and scandium, the at least one element in an amount less than or equal to 7 at. % of the composition;
- and
- applying, during the memory operation, one or more voltages to the memory cell.
Dependencies are inferred from the claim text.