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US 11,056,640 B2Granted
Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
AssigneeWestern Digital Technologies, Inc.
InventorsBhagwati Prasad, Matthew Carey, Alan Kalitsov, Bruce Terris
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Abstract
Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.
Claims20
A magnetoresistive memory device comprising:
- a first electrode;
- a second electrode;
- a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer;
- a hafnium oxide layer located between the second electrode and the free layer;
- and
- a nonmagnetic metal dust layer located between the hafnium oxide layer and the free layer, wherein the nonmagnetic metal dust layer consists essentially of a single elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh.
3 more elements
A method of forming a spin-transfer torque (STT) memory cell, comprising:
- forming a first electrode;
- forming a reference layer over the first electrode;
- forming a nonmagnetic tunnel barrier layer over the reference layer;
- forming a free layer over the nonmagnetic tunnel barrier layer;
- forming a nonmagnetic metal dust layer over the free layer, wherein the nonmagnetic metal dust layer consists essentially of a single elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh;
- forming a hafnium oxide layer over the free layer and the nonmagnetic metal dust layer, and
- forming a second electrode over the hafnium oxide layer.
4 more elements
Dependencies are inferred from the claim text.