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US 11,056,639 B2Granted
Magnetoresistance effect element
AssigneeTDK Corporation
InventorKatsuyuki Nakada
Life of this patent
Estimating the term…
Abstract
A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.
Claims11
A magnetoresistance effect element, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element,
- at least some of the magnetic element intrudes between crystal lattices of the spinel structure,
- the magnetic element is element that is different from the main components of the spinel structure, and
- the magnetic element exhibits ferromagnetism or antiferromagnetism in an alloy or an intermetallic compound.
5 more elements
A magnetoresistance effect element, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element, and
- the magnetic element is one or more elements selected from the group consisting of Gd, Tb and Nd.
3 more elements
Dependencies are inferred from the claim text.