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US 11,056,631 B2Granted
Thermoelectric conversion module
AssigneeYamaha Corporation
InventorsKazushi Sakurauchi, Takahiro Hayashi
Life of this patent
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Abstract
A thermoelectric conversion module includes: a substrate; a plurality of thermoelectric elements including an N-type element and a P-type element; a bonding layer including silver and disposed between the substrate and the plurality of thermoelectric elements; a first electrode that connects the N-type element with the bonding layer, the first electrode including a first nickel layer and an aluminum layer that is disposed between the first nickel layer and the N-type element; and a second electrode that connects the P-type element with the bonding layer, the second electrode including a second nickel layer.
Claims13
A thermoelectric conversion module comprising:
- a high temperature side substrate;
- a low temperature side substrate;
- a plurality of thermoelectric elements including an N-type element and a P-type element;
- a bonding layer including silver and disposed between the high temperature side substrate and the plurality of thermoelectric elements;
- a first electrode disposed between the bonding layer and the N-type element and connecting the N-type element with the bonding layer, the first electrode including a first nickel layer and an aluminum layer that is disposed between the first nickel layer and the N-type element;
- and
- a second electrode that connects the P-type element with the bonding layer, the second electrode including a second nickel layer;
- a third electrode disposed between the low temperature side substrate and the N-type element, the third electrode including a third nickel layer;
- and
- a fourth electrode disposed between the low temperature side substrate and the P-type element, the fourth electrode including a fourth nickel layer,
- wherein the high temperature side substrate includes a conductive film connecting the N-type element and the P-type element in series, and the bonding layer is disposed between the conductive film and the first electrode.
8 more elements
A thermoelectric conversion module comprising:
- a high temperature side substrate;
- a low temperature side substrate;
- a plurality of thermoelectric elements including an N-type element and a P-type element;
- a bonding layer including silver and disposed between the high temperature side substrate and the plurality of thermoelectric elements;
- a first electrode disposed between the bonding layer and the N-type element and connecting the N-type element with the bonding layer, the first electrode including a first nickel layer and an aluminum layer that is disposed between the first nickel layer and the N-type element;
- and
- a second electrode that connects the P-type element with the bonding layer, the second electrode including a second nickel layer;
- a third electrode disposed between the low temperature side substrate and the N-type element, the third electrode including a third nickel layer;
- and
- a fourth electrode disposed between the low temperature side substrate and the P-type element, the fourth electrode including a fourth nickel layer,
- wherein the high temperature side substrate includes a conductive film connecting the N-type element and the P-type element in series, a first surface of the bonding layer directly contacts the conductive film, and a second surface of the bonding layer directly contacts the first electrode.
8 more elements
A thermoelectric conversion module comprising:
- a high temperature side substrate;
- a low temperature side substrate;
- a plurality of thermoelectric elements including an N-type element and a P-type element;
- a bonding layer including silver and disposed between the high temperature side substrate and the plurality of thermoelectric elements;
- a first electrode disposed between the bonding layer and the N-type element and connecting the N-type element with the bonding layer, the first electrode including a first nickel layer and an aluminum layer that is disposed between the first nickel layer and the N-type element;
- and
- a second electrode that connects the P-type element with the bonding layer, the second electrode including a second nickel layer;
- a third electrode disposed between the low temperature side substrate and the N-type element, the third electrode including a third nickel layer;
- and
- a fourth electrode disposed between the low temperature side substrate and the P-type element, the fourth electrode including a fourth nickel layer,
- wherein the first electrode further includes a first conductive layer and a second conductive layer sandwiching the first nickel layer and the aluminum layer such that the first conductive layer is disposed between the N-type element and the aluminum layer, and the second conductive layer is disposed between the bonding layer and the first nickel layer.
8 more elements
Dependencies are inferred from the claim text.