Light source module and backlight unit having the same
AssigneeSeoul Semiconductor Co., Ltd.
InventorsYoung Jun Song, Da Hye Kim, Seoung Ho Jung
Life of this patent
Estimating the term…
Abstract
A backlight unit including a light guide plate, a first light source and a second light source adjacent to the light guide plate, each of the light sources including a light emitting diode chip including a substrate and a semiconductor stack disposed on the substrate, a wavelength conversion layer covering the light emitting diode chip, and a plurality of reflectors disposed on at least two opposing side surfaces of the light emitting diode chip, in which at least a portion of the wavelength conversion layer of the first light source facing the second light source is exposed by the reflectors.
Claims18
A backlight unit comprising:
- a light guide plate;
- and
- a first light source and a second light source adjacent to the light guide plate, each of the light sources comprising:
- a light emitting diode chip comprising a growth substrate and a semiconductor stack disposed on the growth substrate;
- a wavelength conversion layer directly disposed on the light emitting diode chip and extending to cover a side surface of the semiconductor stack of the light emitting diode chip;
- a plurality of reflectors disposed on at least two opposing side surfaces of the light emitting diode chip;
- and
- electrode pads disposed on a lower surface of the light emitting diode chip, the electrode pads not overlapping the reflectors,
- wherein at least a portion of the wavelength conversion layer of the first light source facing the second light source is exposed by the reflectors, and
- wherein an upper surface of at least one of the reflectors is flush with an upper surface of the wavelength conversion layer.
A backlight unit comprising:
- a light guide plate having a substantially flat shape;
- and
- at least one light source disposed adjacent to the light guide plate, the light source comprising:
- a light emitting diode chip comprising a plurality of semiconductor stacks;
- a wavelength conversion layer directly disposed on the light emitting diode chip and extending to cover a side surface of each of the semiconductor stacks, respectively;
- a reflective unit disposed on at least one side surfaces of the wavelength conversion layer, and having an upper surface flush with an upper surface of the wavelength conversion layer;
- and
- electrode pads disposed on a lower surface of the light emitting diode chip, the electrode pads not overlapping the reflective unit,
- wherein each of the semiconductor stacks comprises:
- a growth substrate;
- a first conductive type semiconductor layer formed on the growth substrate;
- a mesa formed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer;
- an electrode formed on the mesa;
- a current spreading layer on the mesa and the first conductive type semiconductor layer;
- and
- a lower insulation layer formed between the mesa and the current spreading layer and insulting the current spreading layer form the mesa;
- an upper insulation layer formed on the current spreading layer;
- and
- a first pad and a second pad formed on the upper insulation layer;
- wherein the first pad is electrically connect to the current spreading layer, and
- wherein the second pad is electrically connect to the electrode.
Dependencies are inferred from the claim text.