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US 11,056,619 B2Granted
Quantum dot materials and method of manufacturing thereof
AssigneeFeng Chia University
InventorChun-Feng Lai
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Abstract
A quantum dot material and a method of manufacturing quantum dot materials are provided. The method comprises a step of providing a quantum dot solution and a silicon compound, a step of introducing the quantum dot solution and the silicon compound to a cross-linking agent and an ammonia solution (NH4OH) for cross-linking reaction, and a step of obtaining a quantum dot material coated with a silicon oxide (SiOx) material.
Claims16
A method of manufacturing quantum dot materials, comprising:
- providing a quantum dot solution having a first volume and a silicon compound having a second volume;
- introducing the quantum dot solution and the silicon compound to a cross-linking agent and an ammonia solution (NH4OH) having a third volume;
- and
- obtaining quantum dot materials.
1 more element
Dependencies are inferred from the claim text.