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US 11,056,611 B2Granted
Mesa formation for wafer-to-wafer bonding
AssigneeFacebook Technologies, LLC
InventorsWilliam Padraic Henry, James Ronald Bonar, Gareth Valentine
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Abstract
Disclosed herein are techniques for wafer-to-wafer bonding for manufacturing light emitting diodes (LEDs). In some embodiments, a method of manufacturing LEDs includes etching a semiconductor material to form a plurality of adjacent mesa shapes. The semiconductor material includes one or more epitaxial layers. The method also includes forming a passivation layer within gaps between the adjacent mesa shapes and bonding a base wafer to a first surface of the semiconductor material.
Claims23
A method comprising:
- etching a semiconductor material to form a plurality of adjacent mesa shapes, the semiconductor material comprising one or more epitaxial layers;
- forming a passivation layer to fill gaps between the adjacent mesa shapes such that no space remains between the adjacent mesa shapes;
- planarizing the passivation layer and the semiconductor material, wherein the planarizing produces a flat surface comprising a surface of the passivation layer and a first surface of the semiconductor material;
- forming a contact layer on the flat surface;
- and
- bonding a base wafer to the contact layer.
3 more elements
Dependencies are inferred from the claim text.