Method of forming a metal silicide transparent conductive electrode

A method, comprising:

• forming, on a substrate, a metal silicide nanowire network for a transparent conducting film such that said metal silicide nanowire network comprises multiple metal silicide nanowires fused together in a grid on said substrate by
• printing a first set of multiple parallel silicon nanowires on said substrate;
• subsequently printing a second set of multiple parallel silicon nanowires on said substrate over said first set of multiple parallel silicon nanowires such that silicon nanowires in said second set of multiple parallel silicon nanowires are perpendicular to silicon nanowires in said first set of multiple parallel silicon nanowires;
• forming a metal layer over said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires;
• performing a silicidation anneal to cause metal atoms from said metal layer to react with silicon material in said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires thus forming a plurality of metal silicide nanowires;
• and
• fusing said plurality of metal silicide nanowires into said grid on said substrate.

A method, comprising:

• forming, on a substrate, a metal silicide nanowire network for a transparent conducting film such that said metal silicide nanowire network comprises multiple metal silicide nanowires fused together in a grid on said substrate by
• printing a first set of multiple parallel metal nanowires on said substrate;
• subsequently printing a second set of multiple parallel metal nanowires on said substrate over said first set of multiple parallel metal nanowires such that metal nanowires in said second set of multiple parallel metal nanowires are perpendicular to metal nanowires in said first set of multiple parallel metal nanowires;
• forming a silicon layer over said first set of multiple parallel metal nanowires and said second set of multiple parallel metal nanowires;
• performing a silicidation anneal to cause metal atoms from said metal nanowires in said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires react with silicon material in said silicon layer thus forming a plurality of metal silicide nanowires;
• and
• fusing said plurality of metal silicide nanowires into said grid on said substrate.