Infrared detection film, infrared detection sensor and infrared detection display apparatus including the infrared detection film, and method of making the infrared detection film

A method of making an infrared detection film adapted to be formed on a substrate provided with a thin-film transistor, comprising:

• forming a gate electrode on the substrate using magnetron sputtering technique;
• surroundingly forming a gate insulating layer on the gate electrode using chemical vapor deposition (CVD) technique or the magnetron sputtering technique;
• forming a majority-carrier channel layer on the gate insulating layer;
• forming an n-type semiconductor film on the majority-carrier channel layer using the CVD technique;
• forming a metal film on the n-type semiconductor film using the magnetron sputtering technique;
• patterning the n-type semiconductor film and the metal film to form at least one drain terminal and at least one source terminal using photolithography technique and etching technique;
• the at least one drain terminal and the at least one source terminal being spaced apart from each other;
• and
• forming a photovoltaic semiconductor layer on an exposed portion of the majority-carrier channel layer exposed between the at least one drain terminal and the at least one source terminal so as to isolate the photovoltaic semiconductor layer from the at least one drain terminal and the at least one source terminal.