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US 11,056,606 B2Granted
Photodetector and method of manufacture
AssigneeVisionary Semiconductor Inc.
InventorsZhen Gao, Navid Mohammad Sadeghi Jahed, Siva Sivoththaman
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Abstract
The present invention teaches a structure of a photodetector and the method of making thereof. A photodetector inaccordance of the present invention is easy to fabricate, can be fabricated through low temperature processes, has high responsivity, high switching speed and high active area to device area ratio, is able to operate under photovotaic mode or reverse bias conditions.
Claims11
A photodetector comprising:
- a transparent conductive oxide (TCO) layer for receiving incident photons;
- and,
- a semiconductor substrate for capturing and detecting the received photons, the TCO layer positioned on the semiconductor substrate such that TCO layer and semiconductor substrate meet at a junction interface;
- the TCO layer combined with the semiconductor substrate at the junction interface to form a heterojunction;
- and
- a TCO layer thickness selected to minimize reflection of one or more predetermined wavelengths of the incident photons.
3 more elements
Dependencies are inferred from the claim text.