Photoelectric conversion element, photoelectric conversion element module, electronic device, and power supply module

A photoelectric conversion element, comprising:

• a first electrode;
• an electron-transporting layer;
• a hole-transporting layer;
• and
• a second electrode having an average thickness in a range of from 20 to 300 nm,
• wherein the hole-transporting layer and the second electrode are in contact with each other, and
• wherein the hole-transporting layer satisfies a formula (1):
• 0%<Rc(50)≤0.75% (1)
• wherein an average thickness of the hole-transporting layer is X (nm), and Rc(50) is a ratio of an area of projected parts that are projected from a standard line towards the second electrode, of formula (2):
• Rc(50)=X/(X+50) (2),
• wherein the standard line is present at a position that is away, by X+50 (u n), from an opposite surface of the hole-transporting layer to a surface of the hole-transporting layer in contact with the second electrode.