Back to results
US 11,056,596 B2Granted
Semiconductor device and method of manufacturing the same
AssigneesHyundai Motor Company, Kia Motors Corporation
InventorNackYong Joo
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to an exemplary embodiment of the present disclosure includes: an n− type layer disposed in a first surface of a substrate; an n type layer disposed on the n− type layer; a first electrode disposed on the n type layer, and a second electrode disposed in a second surface of the substrate, wherein an energy band gap of the n− type layer is larger than an energy band gap of the n type layer.
Claims9
A semiconductor device comprising:
- an n− type layer disposed in a first surface of a substrate;
- an n type layer disposed on the n− type layer, wherein the n type layer and the substrate are different layers;
- a first electrode disposed on the n type layer;
- a second electrode disposed in a second surface of the substrate;
- and
- a low concentration silicon n type layer disposed between the n− type layer and the n type layer;
- wherein an energy band gap of the n− type layer is larger than the energy band gap of the n type layer;
- wherein a Schottky junction is formed in a contacting surface of the first electrode and the n type layer;
- wherein an ion doping concentration of the n− type layer is smaller than an ion doping concentration of the n type layer;
- and
- wherein the ion doping concentration of the low concentration silicon n type layer is smaller than the ion doping concentration of the n− type layer.
8 more elements
A semiconductor device comprising:
- an n− type layer disposed in a first surface of a substrate;
- an n type layer disposed on the n− type layer, wherein the n type layer and the substrate are different layers;
- a first electrode disposed on the n type layer;
- a second electrode disposed in a second surface of the substrate;
- and
- a low concentration silicon carbide n type layer disposed between the n− type layer and the n type layer;
- and
- wherein a Schottky junction is formed in a contacting surface of the first electrode and the n type layer;
- wherein an ion doping concentration of the n− type layer is smaller than an ion doping concentration of the n type layer;
- and
- wherein the ion doping concentration of the low concentration silicon carbide n type layer is smaller than the ion doping concentration of the n− type layer.
8 more elements
A method for manufacturing a semiconductor device comprising:
- forming an n− type layer in a first surface of a substrate;
- forming an n type layer on the n− type layer, wherein the n type layer and the substrate are different layers;
- forming a first electrode on the n type layer;
- and
- forming a second electrode in a second surface of the substrate;
- wherein an energy band gap of the n− type layer is larger than the energy band gap of the n type layer;
- wherein a Schottky junction is formed in a contacting surface of the first electrode and the n type layer;
- wherein an ion doping concentration of the n− type layer is smaller than an ion doping concentration of the n type layer;
- wherein the n− type layer includes silicon carbide, and the n type layer includes silicon;
- and
- wherein the forming of the n type layer includes:
- forming a silicon n− type layer by epitaxial growth on the n− type layer;
- and
- implanting an n type ion on the silicon n− type layer;
- and
- the silicon n− type layer includes silicon.
13 more elements
Dependencies are inferred from the claim text.