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US 11,056,595 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeMagnaChip Semiconductor, Ltd.
InventorsYong Won Lee, Jin Woo Han, Dae Won Hwang, Kyung Wook Kim
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Abstract
A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.
Claims17
A manufacturing method for fabricating a semiconductor device, the method comprising:
- forming a substrate;
- forming a counter doping region in the substrate;
- forming a Schottky barrier diode (SBD) region by forming a metal layer directly on the counter doping region;
- forming a trench in the substrate;
- forming a BODY region adjacent to the trench;
- and
- forming a WELL region to surround the BODY region in the SBD region in the substrate,
- wherein the counter doping region comprises:
- a first doping region disposed outside the WELL region, and
- a second doping region disposed in the WELL region, and
- wherein the SBD region comprises the first doping region and the second doping region.
8 more elements
A manufacturing method for fabricating a semiconductor device, the method comprising:
- forming a substrate having a first conductivity type;
- forming a counter doping region in the substrate by injecting ions having a second conductivity type to form the counter doping region;
- forming a Schottky barrier diode (SBD) region by forming a metal layer directly on the counter doping region;
- forming trenches in the substrate region;
- forming a BODY region having the second conductivity type adjacent to the trenches;
- and
- forming a WELL region in the Schottky barrier diode (SBD) region in the substrate, the WELL region having the second conductivity type and disposed adjacent to the trenches,
- wherein the counter doping region comprises:
- a first doping region disposed outside the WELL region, and
- a second doping region disposed in the WELL region, and
- wherein the SBD region comprises the first doping region and the second doping region.
8 more elements
Dependencies are inferred from the claim text.