Semiconductor device having fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Kuan Lin, Chang-Ta Yang, Ping-Wei Wang
Life of this patent
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Abstract
A semiconductor device structure is provided. The structure includes a semiconductor substrate having a well pick-up region and an active region adjacent to the well pick-up region. The semiconductor device structure also includes a first fin structure with a first width and a third fin structure with a third width formed adjacent to each other in the well pick-up region and a second fin structure with a second width and a fourth fin structure with a fourth width formed adjacent to each other in the active region. The first width is different than the second width, the third width is different than the fourth width, and the first width is substantially equal to or greater than the third width.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate having a well pick-up region and an active region adjacent to the well pick-up region;
- a first fin structure with a first width and a third fin structure with a third width formed adjacent to each other in the well pick-up region;
- and
- a second fin structure with a second width and a fourth fin structure with a fourth width formed adjacent to each other in the active region,
- wherein the first width is different than the second width, the third width is different than the fourth width, and wherein the first width is substantially equal to or greater than the third width.
A semiconductor device structure, comprising:
- a semiconductor substrate having a well pick-up region and an active region, wherein each of the well pick-up region and the active region comprises a first well region having a first conductivity type;
- a first fin structure in the first well region of the well pick-up region;
- and
- a plurality of second fin structures in the first well region of the active region,
- wherein the first fin structure has a first width and each second fin structure of the plurality of the second fin structures has a second width less than the first width.
A semiconductor device structure, comprising:
- a well pick-up region formed in a semiconductor substrate;
- an active region formed adjacent to the well pick-up region in the semiconductor substrate;
- a first fin structure formed in a first region of the well pick-up region;
- a second fin structure formed in a first region of the active region, wherein the first region of the well pick-up region and the first region of the active region are doped with a first type of dopants;
- a third fin structure formed in a second region of the well pick-up region;
- and
- a fourth fin structure formed in a second region of the active region, wherein the second region of the well pick-up region and the second region of the active region are doped with a second type of dopants,
- wherein the first fin structure has a first length and a first width, the second fin structure has a second length and a second width, the third fin structure has a third length and a third width, and the fourth fin structure has a fourth length and a fourth width, and
- wherein the first width is greater than the second width, and the third width is greater than the fourth width.
Dependencies are inferred from the claim text.