US 11,056,593 B2 · Semiconductor devices with metal contacts including crystalline alloys

Abstract

Techniques are disclosed for forming semiconductor integrated circuits including one or more of source and drain contacts and gate electrodes comprising crystalline alloys including a transition metal. The crystalline alloys help to reduce contact resistance to the semiconductor devices. In some embodiments of the present disclosure, this reduction in contact resistance is accomplished by aligning the work function of the crystalline alloy with the work function of the source and drain regions such that a Schottky barrier height associated with an interface between the crystalline alloys and the source and drain regions is in a range of 0.3 eV or less.

Claims19

Dependent claims

A semiconductor device, comprising:

a body comprising semiconductor material;
a gate electrode at least above the body, the gate electrode comprising a crystalline alloy including a transition metal;
a gate dielectric between the gate electrode and the body;
and
a layer directly between the gate dielectric and the gate electrode, wherein the layer is lattice matched to crystalline alloy.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/631,059Filed 12 Sep 2017

Published

US 2020/0152781 A114 May 2020

Granted

6 Jul 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]
H10D 30/021
Manufacture or treatment: of FETs having insulated gates [IGFET]
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes

Semiconductor devices with metal contacts including crystalline alloys

Life of this patent

Semiconductor devices with metal contacts including crystalline alloys

Life of this patent

Abstract

Claims19