Epitaxial structures of semiconductor devices that are independent of local pattern density
AssigneeGlobalFoundries U.S. Inc.
InventorsJin Wallner, Heng Yang, Judson Robert Holt
Life of this patent
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Abstract
A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.
Claims20
A method of forming a semiconductor device comprising:
- providing active gate structures over an active region;
- forming a hard mask segment on the active region positioned between a first active gate structure and a second active gate structure, the second active gate structure being immediately adjacent to the first active gate structure;
- forming cavities in the active region between the first and second active gate structures using the active gate structures and the hard mask segment as masking features, wherein each cavity is substantially uniform in size and the cavities separated by an active region segment therebetween, the active region segment having a pre-determined width that defines the widths of the cavities;
- and
- growing epitaxial material in the cavities to form epitaxial structures that are substantially uniform in size in the active region.
A method of forming a semiconductor device comprising:
- providing a first active gate structure and a second active gate structure over an active region, the second active gate structure being immediately adjacent to the first active gate structure;
- forming a hard mask layer over the first active gate structure, the second active gate structure and the active region;
- removing portions of the hard mask layer to form a hard mask segment and exposing a first portion of the active region between the first active gate structure and the hard mask segment and a second portion of the active region between the hard mask segment and the second active gate structure;
- forming cavities in the exposed first and second portions of the active region, wherein each cavity is substantially uniform in size and the cavities separated by an active region segment therebetween, the active region segment having a pre-determined width that defines the widths of the cavities;
- and
- growing epitaxial material in the cavities to form epitaxial structures that are substantially uniform in size in the active region.
A semiconductor device comprising:
- a first active gate structure and a second active gate structure over an active region, the second active gate structure being immediately adjacent to the first active gate structure;
- at least two epitaxial structures therebetween the first and second active gate structures, wherein the two epitaxial structures are separated by an active region segment, the active region segment having a pre-determined width that defines the widths of the epitaxial structures;
- and
- the at least two epitaxial structures are substantially uniform in size.
Dependencies are inferred from the claim text.