Semiconductor device

A semiconductor device being in a shape of a package having a chip size, the semiconductor device that is facedown-mountable, the semiconductor device, comprising:

• a semiconductor substrate comprising silicon and containing an impurity of a first conductivity type;
• a low-concentration impurity layer being in contact with an upper surface of the semiconductor substrate and containing the first conductivity type impurity, concentration of which is lower than concentration of the first conductivity type impurity in the semiconductor substrate;
• a metal layer being in contact with a lower surface of the semiconductor substrate and consisting of a metal material;
• a first vertical MOS transistor formed in a first region of the low-concentration impurity layer;
• and
• a second vertical metal oxide semiconductor (MOS) transistor formed in a second region of the low-concentration impurity layer, the second region being adjacent to the first region in a direction along the upper surface of the semiconductor substrate,
• wherein the first vertical MOS transistor has a first source electrode and a first gate electrode, the first source electrode and the first gate electrode being disposed on an upper surface of the low-concentration impurity layer,
• the second vertical MOS transistor has a second source electrode and a second gate electrode, the second source electrode and the second gate electrode being disposed on the upper surface of the low-concentration impurity layer,
• the semiconductor substrate functions as a common drain region serving as both a first drain region of the first vertical MOS transistor and a second drain region of the second vertical MOS transistor,
• a primary current path that is a bidirectional path along which current flows between the first source electrode and the second source electrode via the first drain region, the metal layer, and the second drain region,
• a ratio of a thickness of the metal layer to a thickness of a semiconductor layer containing the semiconductor substrate and the low-concentration impurity layer is greater than 0.27,
• the semiconductor device further comprises a support comprising a ceramic material and bonded to a lower surface of the metal layer only via a bonding layer, and
• a side surface of the semiconductor layer and a side surface of the support are included in a same plane.

A semiconductor device being in a shape of a package having a chip size, the semiconductor device that is facedown-mountable, the semiconductor device, comprising:

• a semiconductor substrate comprising silicon and containing an impurity of a first conductivity type;
• a low-concentration impurity layer being in contact with an upper surface of the semiconductor substrate and containing the first conductivity type impurity, concentration of which is lower than concentration of the first conductivity type impurity in the semiconductor substrate;
• a metal layer being in contact with a lower surface of the semiconductor substrate and consisting of a metal material;
• a first vertical MOS transistor formed in a first region of the low-concentration impurity layer;
• and
• a second vertical metal oxide semiconductor (MOS) transistor formed in a second region of the low-concentration impurity layer, the second region being adjacent to the first region in a direction along the upper surface of the semiconductor substrate,
• wherein the first vertical MOS transistor has a first source electrode and a first gate electrode, the first source electrode and the first gate electrode being disposed on an upper surface of the low-concentration impurity layer,
• the second vertical MOS transistor has a second source electrode and a second gate electrode, the second source electrode and the second gate electrode being disposed on the upper surface of the low-concentration impurity layer,
• the semiconductor substrate functions as a common drain region serving as both a first drain region of the first vertical MOS transistor and a second drain region of the second vertical MOS transistor,
• a primary current path that is a bidirectional path along which current flows between the first source electrode and the second source electrode via the first drain region, the metal layer, and the second drain region,
• a ratio of a thickness of the metal layer to a thickness of a semiconductor layer containing the semiconductor substrate and the low-concentration impurity layer is greater than 0.27,
• the semiconductor device further comprises a support comprising a ceramic material and bonded to a lower surface of the metal layer only via a bonding layer, and
• the bonding layer has a coefficient of thermal expansion of at most 50 ppm/° C. or Young's modulus of at most 5 GPa.