Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a base substrate;
• a gate structure formed on the base substrate, and including a gate electrode and a gate dielectric film between the base substrate and the gate electrode;
• a source region of a first conductivity type disposed on a first side of the gate structure;
• a body region of a second conductivity type surrounding the source region, and formed in the base substrate;
• a drain region of the first conductivity type disposed on a second side of the gate structure;
• a drift region of the first conductivity type surrounding the drain region;
• having an impurity concentration lower than the drain region, and formed in the base substrate;
• a dummy gate structure formed on the drift region, and including a dummy gate electrode and a dummy gate dielectric film between the drift region and the dummy gate electrode;
• and
• an insulating structure interposed between the second side of the gate structure and the drift region,
• wherein a lowermost surface of the insulating structure is disposed on the same plane as an uppermost surface of the drift region,
• wherein the insulating structure is interposed between the drift region and a first side of the dummy gate structure adjacent to the source region.

A semiconductor device comprising:

• a base substrate;
• a source region and a drain region of a first conductivity type spaced apart from each other, and formed in the base substrate;
• a body region of a second conductivity type surrounding the source region, and formed the base substrate;
• a drift region of the first conductivity type surrounding the drain region, having a lower impurity concentration than the drain region, and formed in the base substrate;
• an insulating structure disposed on the drill region;
• a gate structure disposed over the body region and the insulating structure, and formed on the base substrate between the source region and the drain region;
• and
• a dummy gate structure extending along an upper surface of the drift region, and formed on the drift region between the insulating structure and the drain region,
• wherein the insulating structure is disposed between the dummy gate structure and the upper surface of the drift region.