Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device concept

A bidirectional thyristor device comprising:

• a semiconductor wafer having a first main side and a second main side opposite to the first main side, wherein the semiconductor wafer includes in an order from the first main side to the second main side the following layers:
• a first semiconductor layer of a first conductivity type;
• a second semiconductor layer of a second conductivity type different from the first conductivity type, wherein the first semiconductor layer and the second semiconductor layer form a first p-n junction;
• a third semiconductor layer of the first conductivity type, the second semiconductor layer and the third semiconductor layer forming a second p-n junction;
• a fourth semiconductor layer of the second conductivity type, wherein the third semiconductor layer and the fourth semiconductor layer form a third p-n junction;
• and
• a fifth semiconductor layer of the first conductivity type, wherein the fourth semiconductor layer and the fifth semiconductor layer form a fourth p-n junction;
• a first main electrode arranged on the first main side and in direct contact with the first semiconductor layer;
• a first gate electrode is arranged on the first main side spaced from the first main electrode, the first gate electrode in direct contact with the second semiconductor layer;
• a second main electrode arranged on the second main side and in direct contact with the fifth semiconductor layer;
• and
• a second gate electrode arranged on the second main side spaced from the second main electrode, the second gate electrode in direct contact with the fourth semiconductor layer;
• a plurality of first discrete emitter shorts, each first emitter short penetrating through the first semiconductor layer to electrically connect the second semiconductor layer with the first main electrode, wherein a distance between two neighboring first emitter shorts is varied in such way that an average distance between two neighboring first emitter shorts decreases with increasing distance from the first gate electrode;
• and
• a plurality of second discrete emitter shorts, each second emitter short penetrating through the fifth semiconductor layer to electrically connect the fourth semiconductor layer with the second main electrode, wherein a distance between two neighboring second emitter shorts is varied in such way that an average distance between two neighboring second emitter shorts decreases with increasing distance from the second gate electrode;
• wherein, in an orthogonal projection onto a plane parallel to the first main side, a first area occupied by the first semiconductor layer and the first emitter shorts overlaps in an overlapping area with a second area occupied by the fifth semiconductor layer and the second emitter shorts;
• and
• wherein, in the orthogonal projection onto the plane parallel to the first main side, the overlapping area, in which the first area overlaps with the second area, encompasses at least 50% of a total wafer area occupied by the semiconductor wafer.

A bidirectional thyristor device comprising:

• a semiconductor wafer having a first main side and a second main side opposite to the first main side, wherein the semiconductor wafer includes in an order from the first main side to the second main side the following layers:
• a first semiconductor layer of a first conductivity type;
• a second semiconductor layer of a second conductivity type different from the first conductivity type, wherein the first semiconductor layer and the second semiconductor layer form a first p-n junction;
• a third semiconductor layer of the first conductivity type, the second semiconductor layer and the third semiconductor layer forming a second p-n junction;
• a fourth semiconductor layer of the second conductivity type, wherein the third semiconductor layer and the fourth semiconductor layer form a third p-n junction;
• and
• a fifth semiconductor layer of the first conductivity type, wherein the fourth semiconductor layer and the fifth semiconductor layer form a fourth p-n junction;
• a first main electrode arranged on the first main side and in direct contact with the first semiconductor layer;
• a first gate electrode is arranged on the first main side spaced from the first main electrode, the first gate electrode in direct contact with the second semiconductor layer;
• a second main electrode arranged on the second main side and in direct contact with the fifth semiconductor layer;
• and
• a second gate electrode arranged on the second main side spaced from the second main electrode, the second gate electrode in direct contact with the fourth semiconductor layer;
• a plurality of first emitter shorts, each first emitter short penetrating through the first semiconductor layer to electrically connect the second semiconductor layer with the first main electrode;
• and
• a plurality of second emitter shorts, each second emitter short penetrating through the fifth semiconductor layer to electrically connect the fourth semiconductor layer with the second main electrode;
• wherein, in an orthogonal projection onto a plane parallel to the first main side, a first area occupied by the first semiconductor layer and the first emitter shorts overlaps in an overlapping area with a second area occupied by the fifth semiconductor layer and the second emitter shorts;
• wherein, in the orthogonal projection onto the plane parallel to the first main side, the overlapping area, in which the first area overlaps with the second area, encompasses at least 50% of a total wafer area occupied by the semiconductor wafer;
• wherein a density of deep levels acting as recombination centers in the third semiconductor layer has a first local maximum that is closer to the second p-n junction than to the third p-n junction, the first local maximum is less than 50 μm from the second p-n junction;
• and
• wherein the density of deep levels acting as recombination centers in the third semiconductor layer has a second local maximum that is closer to the third p-n junction than to the second p-n junction, the second local maximum is less than 50 μm from the third p-n junction.