Trench-gate insulated-gate bipolar transistors
AssigneeSemiconductor Components Industries, LLC
InventorsMingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna, Meng-Chia Lee, Ralph N. Wall
Life of this patent
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Abstract
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.
Claims18
An insulated gate bipolar transistor (IGBT) device, comprising:
- an active region;
- an inactive region, the inactive region including a termination region;
- a trench extending along a longitudinal axis in the active region;
- a first mesa defined by a first sidewall of the trench and in parallel with the trench;
- and
- a second mesa defined by a second sidewall of the trench and in parallel with the trench,
- the first mesa being an active mesa of the IGBT device disposed in the active region, and
- the second mesa being an inactive mesa of the IGBT device disposed in the active region, the inactive mesa of the IGBT device being defined, at least in part, by a dielectric material, the active mesa being disposed between the inactive mesa and the inactive region.
An insulated gate bipolar transistor (IGBT) device, comprising:
- an inactive region, the inactive region including a dielectric termination region;
- and
- a plurality of interconnected active IGBT regions distributively disposed within the inactive region, the plurality of interconnected active IGBT regions being interconnected using at least one of a metal or a doped polysilicon,
- an active IGBT region of the plurality of interconnected active IGBT regions including:
- a trench extending along a longitudinal axis, a first sidewall of the trench being defined by an active IGBT mesa of the active IGBT region, and a second sidewall of the trench being defined, at least in part, by the dielectric termination region, the dielectric termination region surrounding a perimeter of the active IGBT region of the plurality of interconnected active IGBT regions.
An insulated gate bipolar transistor (IGBT) device, comprising:
- a dielectric termination region that excludes doped semiconductor regions;
- an active emitter mesa, a perimeter of the active emitter mesa being surrounded by the dielectric termination region;
- and
- a trench extending along a longitudinal axis, a first sidewall of the trench being defined by the active emitter mesa, and a second sidewall of the trench being defined by the dielectric termination region.
Dependencies are inferred from the claim text.