Method of manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorChih-Wei Huang
Life of this patent
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of creating at least one trench in a substrate; forming a dielectric film on the substrate in the trench; depositing a first conductive layer on the dielectric film to partially fill the trench; depositing an insulative film on the first conductive layer; depositing a second conductive layer to bury the insulative film; and recessing the first conductive layer, until the insulative film is entirely removed. Due to the deposition of the insulative film on the first conductive layer, the etch depth of the superfluous first conductive layer can be accurately controlled.
Claims12
A method of manufacturing a semiconductor device, comprising:
- creating at least one trench in a substrate;
- forming a dielectric film on the substrate in the at least one trench;
- depositing a first conductive layer on the dielectric film to partially fill the at least one trench;
- depositing an insulative film on the first conductive layer, wherein the insulative film, in the at least one trench, is surrounded by the first conductive layer;
- depositing a second conductive layer on the insulative film, wherein the second conductive layer, in the at least one trench, is surrounded by the insulative layer;
- and
- recessing the first conductive layer, until the insulative film is entirely removed, to form at least one word line.
Dependencies are inferred from the claim text.