Implantation and annealing for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chang Lin, Tien-Shun Chang, Szu-Ying Chen, Chun-Feng Nieh, Sen-Hong Syue, Huicheng Chang
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Abstract
A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in interlayer dielectric thickness and to an enlargement of critical dimensions of a metal gate.
Claims20
A method of manufacturing a device, the method comprising:
- forming a dummy gate on a semiconductor substrate;
- depositing a mask on the dummy gate;
- forming an interlayer dielectric (ILD) over the semiconductor substrate;
- performing a first planarization on the ILD, a top surface of the ILD being level with a top surface of the mask after the first planarization;
- removing the mask;
- performing a second planarization on the ILD, a top surface of the ILD being level with a top surface of the dummy gate after the second planarization;
- implanting a dopant into the ILD;
- after implanting the dopant, removing the dummy gate;
- and
- after removing the dummy gate, performing an anneal on the ILD.
A method of manufacturing a device, the method comprising:
- forming a fin on a substrate;
- forming a dummy gate over the fin;
- forming a mask on the dummy gate;
- forming an interlayer dielectric (ILD) over the fin and mask with a flowable chemical vapor deposition (FCVD);
- performing a UV cure on the ILD;
- performing a first anneal on the ILD;
- leveling the ILD with a top surface of the mask;
- performing a second anneal on the ILD;
- removing the mask;
- leveling the ILD with a top surface of the dummy gate;
- performing a nitrogen implantation on the ILD;
- removing the dummy gate;
- performing a third anneal on the ILD;
- forming a gate dielectric in a recess left by removing the dummy gate;
- and
- depositing a gate electrode over the gate dielectric.
A method of manufacturing a device, the method comprising:
- forming a dummy gate structure over a fin, the fin extending from a semiconductor substrate;
- forming a mask over the dummy gate structure;
- depositing a dielectric layer over the mask, the dummy gate structure and the fin;
- planarizing the dielectric layer to be level with a top surface of the mask;
- performing a first anneal on the dielectric layer;
- performing an etch back process, the etch back process removing the mask;
- planarizing the dielectric layer to be level with a top surface of the dummy gate structure;
- implanting nitrogen into the dielectric layer;
- removing the dummy gate structure to form a first recess;
- after removing the dummy gate structure, performing a second anneal on the dielectric layer;
- and
- forming a gate electrode in the first recess.
Dependencies are inferred from the claim text.