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US 11,056,569 B2Granted
Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
AssigneeAcorn Semi, LLC
InventorsDaniel E. Grupp, Daniel J. Connelly
Life of this patent
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Abstract
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
Claims20
An electrical junction, comprising:
- a semiconductor region in a substrate;
- a metal electrical contact proximate to said semiconductor region;
- and
- an interface layer disposed between said semiconductor region and said metal electrical contact, said interface layer including a first layer containing a passivating material and a second layer that displaces the semiconductor region from the metal electrical contact, said semiconductor region being electrically connected to said metal electrical contact through said interface layer.
1 more element
An electrical junction, comprising:
- a semiconductor region in a substrate;
- a metal layer in electrical contact with said semiconductor region;
- and
- an interface layer disposed between said semiconductor region and said metal layer, said interface layer including a monolayer of passivating material and configured to reduce a specific electrical contact resistance between the metal layer and the semiconductor region from that which would exist at a junction between the metal layer and the semiconductor region without the interface layer disposed between the semiconductor region and the metal layer, said semiconductor region being electrically connected to said metal layer through said interface layer.
1 more element
Dependencies are inferred from the claim text.