Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsDong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
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Abstract
Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
Claims29
A method for forming a doped metal carbide film on a substrate, the method comprising:
- depositing the doped metal carbide film on the substrate utilizing at least one deposition cycle of a cyclical deposition process, and
- contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas,
- wherein depositing the doped metal carbide film is performed in a first reaction chamber and contacting the doped metal carbide film with the plasma is performed in a second reaction chamber.
The method of 25, wherein depositing the metal nitride film comprises contacting the substrate with a metal precursor and contacting the substrate with a plasma generated from a nitrogen-containing gas.
Dependencies are inferred from the claim text.