Method of manufacturing a memory device
AssigneeWinbond Electronics Corp.
InventorsCheng-Hong Wei, Chien-Hsiang Yu, Hung-Sheng Chen
Life of this patent
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Abstract
Provided is a memory device including a substrate, a plurality of stack structures, a protective layer, and a plurality of contact plugs. The stack structures are disposed over the substrate. The protective layer conformally covers top surfaces and sidewalls of the stack structures. The contact plugs are respectively disposed over the substrate between the stack structures. One of the contact plugs includes a narrower portion and a wider portion over the narrower portion. In a top view, the wider portion is separated from an adjacent protective layer by a distance.
Claims5
A method of manufacturing a memory device, comprising:
- forming a plurality of stack structures on a substrate;
- conformally forming a protective layer on top surfaces and sidewalls of the plurality of stack structures;
- forming a conductive layer on the substrate to fill in spaces between the plurality of stack structures;
- performing a first patterning process to pattern the conductive layer into a plurality of conductive strips, wherein the plurality of conductive strips comprise a first conductive strip and a second conductive strip;
- performing a second patterning process to pattern the first conductive strip into a plurality of conductive pillars;
- and
- performing a replacement process to replace the second conductive strip and the plurality of conductive pillars by a plurality of contact plugs.
Dependencies are inferred from the claim text.