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US 11,056,560 B2Granted
Hetero-epitaxial output device array with serial connections
AssigneesHangZhou HaiCun Information Technology Co., Ltd., Guobiao Zhang
InventorsGuobiao Zhang, Peter Y. Yu
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Abstract
A GaN-on-Si output transistor array comprises a plurality of small monolithic output transistors. Multiple pieces of the small monolithic GaN films are grown epitaxially on the silicon substrate. Each small monolithic output transistor is formed in a respective small monolithic GaN film. The normal transistors are connected in serial, while the defective transistors are not connected.
Claims12
A hetero-epitaxial output device array, comprising:
- a substrate comprising a substrate material;
- a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises first, second and third device regions separated by at least a separation region, the semiconductor films in said first, second and third device regions are different from the semiconductor film in said separation region;
- first, second and third output devices respectively formed in said first, second and third device regions, wherein said first output device is a defective device and disabled, said second and third output devices are normal devices and serially connected.
A hetero-epitaxial output device array, comprising:
- a substrate comprising a substrate material;
- a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises a plurality of device regions separated by at least a separation region, the semiconductor films in said plurality of device regions are different from the semiconductor film in said separation region;
- a plurality of output devices respectively formed in said plurality of device regions, said output devices including at least a defective output device and a plurality of normal output devices, wherein said defective output device is disabled;
- and, said normal output devices are serially connected.
1 more element
Dependencies are inferred from the claim text.