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US 11,056,533 B1Granted
Bipolar junction transistor device with piezoelectric material positioned adjacent thereto
AssigneeGlobalFoundries U.S. Inc.
InventorViorel Ontalus
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Abstract
One illustrative device disclosed herein includes a semiconductor substrate, a bipolar junction transistor (BJT) device that comprises a collector, a base and an emitter, at least one piezoelectric structure comprising a piezoelectric material positioned adjacent the BJT device, and at least first and second conductive contact structures that are conductively coupled to the piezoelectric structure.
Claims20
A device, comprising:
- a semiconductor substrate;
- a bipolar junction transistor (BJT) device, the BJT device comprising a collector, a base and an emitter;
- at least one piezoelectric structure comprising a piezoelectric material positioned adjacent the BJT device;
- and
- at least first and second conductive contact structures that are conductively coupled to the piezoelectric structure.
2 more elements
A device, comprising:
- a semiconductor substrate;
- a bipolar junction transistor (BJT) device, the BJT device comprising a collector, a base and an emitter;
- at least one piezoelectric structure comprising a piezoelectric material positioned adjacent the BJT device, wherein the at least one piezoelectric structure is positioned above an upper surface of the semiconductor substrate;
- and
- at least first and second conductive contact structures that are conductively coupled to the piezoelectric structure, wherein the at least one piezoelectric structure is adapted to deform when a voltage is applied to the at least one piezoelectric structure via the at least first and second conductive contact structures and thereby induce a stress in the BJT device.
2 more elements
A device, comprising:
- a semiconductor substrate;
- a bipolar junction transistor (BJT) device, the BJT device comprising a collector, a base and an emitter;
- at least one piezoelectric structure comprising a piezoelectric material positioned adjacent the BJT device, wherein the at least one piezoelectric structure is at least partially positioned in the semiconductor substrate;
- and
- at least first and second conductive contact structures that are conductively coupled to the piezoelectric structure, wherein the at least one piezoelectric structure is adapted to deform when a voltage is applied to the at least one piezoelectric structure via the at least first and second conductive contact structures and thereby induce a stress in the BJT device.
2 more elements
Dependencies are inferred from the claim text.