Metal oxide interface passivation for photon counting devices
AssigneeGeneral Electric Company
InventorsJinbo Cao, Jongwoo Choi, Aharon Yakimov
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Abstract
Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.
Claims16
A photon counting device comprising:
- a direct mode detector comprising;
- a CdMgTeSe semiconductor layer located between a cathode electrode and an anode electrode;
- and a metal oxide layer comprising a metal oxide, wherein
- the metal oxide comprises a metal that is different from metals present in the CdMgTeSe semiconductor layer.
A direct mode radiation detector comprising a CdMgTeSe semiconductor layer located between a cathode electrode and an anode electrode.
A method for fabricating a direct mode detector comprising a CdMgTeSe semiconductor layer, the method comprising depositing a metal oxide layer comprising a metal oxide, between a cathode electrode and the semiconductor layer of an X-ray detector, wherein
- the metal oxide comprises a metal that is different from metals present in the CdMgTeSe semiconductor layer;
- and
- a thickness of the metal oxide layer ranges from about 0.1 nm to about 5 nm.
Dependencies are inferred from the claim text.