Image pickup device, method of manufacturing image pickup device, and electronic apparatus
AssigneeSony Corporation
InventorShinya Sato
Life of this patent
Estimating the term…
Abstract
Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
Claims20
An imaging device, comprising:
- a semiconductor substrate having a light-receiving region and a peripheral region, the light-receiving region including a plurality of photoelectric conversion regions;
- a first trench disposed adjacent to at least one photoelectric conversion region of the plurality of photoelectric conversion regions in the light-receiving region;
- a second trench disposed in the peripheral region;
- a wiring layer provided at a first side of the semiconductor substrate that is opposite to a light-incident side of the semiconductor substrate;
- and
- an insulating film disposed at the first side of the semiconductor substrate in the semiconductor substrate,
- wherein the second trench is in contact with the insulating film, and flat portions of the insulating film are located at both sides of the second trench in a cross-sectional view.
An electronic apparatus provided with an image pickup device, the image pickup device comprising:
- a semiconductor substrate having a light-receiving region and a peripheral region, the light-receiving region including a plurality of photoelectric conversion regions;
- a first trench disposed adjacent to at least one photoelectric conversion region of the plurality of photoelectric conversion regions in the light-receiving region;
- a second trench disposed in the peripheral region;
- a wiring layer provided at a first side of the semiconductor substrate that is opposite to a light-incident side of the semiconductor substrate;
- and
- an insulating film disposed at the first side of the semiconductor substrate in the semiconductor substrate,
- wherein the second trench is in contact with the insulating film, and flat portions of the insulating film are located at both sides of the second trench in a cross-sectional view.
A method of manufacturing an image pickup device, the method comprising:
- providing a first trench adjacent to at least one photoelectric conversion region of a plurality of photelectric conversion regions in a light-receiving region of a semiconductor substrate;
- providing a second trench in a peripheral region of the semiconductor substrate;
- providing a wiring layer at a first side of the semiconductor substrate,
- wherein the first side of the semiconductor substrate is opposite to a light-incident side of the semiconductor substrate;
- and
- providing an insulating film at the first side of the semiconductor substrate,
- wherein the insulating film is in the semiconductor substrate,
- wherein the second trench is in contact with the insulating film, and
- wherein flat portions of the insulating film are located at both sides of the second trench in a cross-sectional view.
Dependencies are inferred from the claim text.