Back to results
US 11,056,511 B2Granted
Display apparatus and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsYunmo Chung, Daewoo Lee, Ilhun Seo, Hojin Yoon
Life of this patent
Estimating the term…
Abstract
A display apparatus including a first thin film transistor disposed on a substrate and including a first gate electrode and a first active layer including a silicon semiconductor, and a second thin film transistor disposed on the first thin film transistor and including a second gate electrode and a second active layer overlapping the first thin film transistor, the second active layer including an oxide semiconductor.
Claims17
A display apparatus comprising:
- a first thin film transistor disposed on a substrate and comprising a first gate electrode and a first active layer comprising a silicon semiconductor;
- a second thin film transistor disposed on the first thin film transistor and comprising a second gate electrode and a second active layer overlapping the first thin film transistor, the second active layer comprising an oxide semiconductor;
- a first capacitor comprising an upper electrode and a lower electrode;
- and
- a conductive layer disposed between the first thin film transistor and the second thin film transistor,
- wherein the lower electrode of the first capacitor comprises the first gate electrode of the first thin film transistor, and the upper electrode of the first capacitor comprises the conductive layer.
3 more elements
A display apparatus comprising:
- a first thin film transistor disposed on a substrate and comprising a first gate electrode and a first active layer;
- a second thin film transistor disposed on the first thin film transistor and comprising a second gate electrode and a second active layer;
- a conductive layer disposed between the first thin film transistor and the second thin film transistor;
- a first capacitor disposed on the second thin film transistor and at least partially overlapping the second active layer;
- a second capacitor comprising a lower electrode and an upper electrode;
- and
- at least one electrode electrically connecting the first active layer and the second active layer,
- wherein the lower electrode of the second capacitor is the first gate electrode of the first thin film transistor, and the upper electrode of the second capacitor is the conductive layer.
5 more elements
Dependencies are inferred from the claim text.