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US 11,056,510 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kiyoshi Kato, Masayuki Sakakura
Life of this patent
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Abstract
A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.
Claims15
A semiconductor device comprising:
- a first transistor comprising an oxide semiconductor;
- a first insulator over the first transistor, the first insulator comprising a first region, a second region, a third region overlapping the first transistor, and a fourth region;
- and
- a first capacitor over and in contact with the second region, the first capacitor comprising a first conductor, a second conductor and a second insulator,
- wherein the first region and the first conductor do not overlap each other,
- wherein the second region and the first conductor overlap each other,
- wherein the third region and the first conductor do not overlap each other,
- wherein an upper surface of the second region is higher than an upper surface of the first region and an upper surface of the third region,
- wherein the second region and one of a source electrode and a drain electrode of the first transistor overlap each other,
- wherein the first conductor is electrically connected to the one of the source electrode and the drain electrode of the first transistor via a third conductor, and
- wherein the second conductor covers a side surface of the first conductor with the second insulator provided therebetween.
8 more elements
A semiconductor device comprising:
- a first transistor comprising an oxide semiconductor;
- a first insulator over the first transistor, the first insulator comprising a first region, a second region being adjacent to the first region, and a third region being adjacent to the second region;
- and
- a first capacitor over the first insulator, the first capacitor comprising a first conductor, a second conductor and a second insulator,
- wherein the second conductor covers a top surface and side surfaces of the first conductor with the second insulator provided therebetween,
- wherein the first conductor is over and in contact with the second region,
- wherein the first conductor does not overlap with the first region and the third region,
- wherein a thickness of the second region is thicker than a thickness of the first region and a thickness of the third region,
- wherein the second region and one of a source electrode and a drain electrode of the first transistor overlap each other, and
- wherein the first conductor is electrically connected to the one of the source electrode and the drain electrode of the first transistor via a third conductor.
7 more elements
Dependencies are inferred from the claim text.