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US 11,056,508 B2Granted
Ferroelectric memory device
AssigneeSK hynix Inc.
InventorHyangkeun Yoo
Life of this patent
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Abstract
A ferroelectric memory device according to an embodiment includes a substrate, a ferroelectric layer and a gate electrode layer that are sequentially stacked on the substrate, and an oxygen vacancy barrier layer disposed at least between the substrate and the ferroelectric layer or between the ferroelectric layer and the gate electrode layer. The oxygen vacancy barrier layer includes a metal oxide with formula unit components that satisfy a stoichiometric ratio.
Claims16
A ferroelectric memory device comprising:
- a substrate;
- a ferroelectric layer and a gate electrode layer that are sequentially stacked on the substrate;
- a first oxygen vacancy barrier layer disposed between the substrate and the ferroelectric layer;
- and
- a second oxygen vacancy barrier layer disposed between the ferroelectric layer and the gate electrode layer,
- wherein each of the first and second oxygen vacancy barrier layers comprises a metal oxide with formula unit components that satisfy a stoichiometric ratio, and
- wherein each of the ferroelectric layer and the first and second oxygen vacancy barrier layers includes at least one dopant,
- wherein each of the first and second oxygen vacancy barrier layers and the ferroelectric layer comprise the same binary metal oxide,
- wherein the dopant of the ferroelectric layer has a valence different from a valence of a metal in the binary metal oxide, and the dopants of the first and second oxygen vacancy barrier layers have a valence equal to the valence of a metal contained in the binary metal oxide,
- wherein each of the ferroelectric layer and the first and second oxygen vacancy barrier layers includes oxygen vacancies, and
- wherein a concentration of the oxygen vacancies in each of the first and second oxygen vacancy barrier layers is lower than a concentration of the oxygen vacancies in the ferroelectric layer.
8 more elements
A ferroelectric memory device comprising:
- a substrate;
- a ferroelectric metal oxide disposed on the substrate;
- a gate electrode layer disposed on the ferroelectric metal oxide;
- a first ferroelectric oxygen vacancy barrier layer disposed between the substrate and the ferroelectric metal oxide;
- and
- a second ferroelectric oxygen vacancy barrier layer disposed between the ferroelectric metal oxide and the gate electrode layer,
- wherein the ferroelectric metal oxide and the first and second ferroelectric oxygen vacancy barrier layers each comprise the same metal oxide,
- wherein each of the ferroelectric metal oxide and the first and second oxygen vacancy barrier layers includes at least one dopant,
- wherein the first and second oxygen vacancy barrier layers and the ferroelectric layer comprise the same binary metal oxide,
- wherein the dopant of the ferroelectric metal oxide has a valence different from a valence of a metal in the binary metal oxide, and the dopants of the first and second oxygen vacancy barrier layers have a valence equal to the valence of a metal contained in the binary metal oxide,
- wherein each of the ferroelectric layer and the first and second oxygen vacancy barrier layers includes oxygen vacancies, and
- wherein a concentration of the oxygen vacancies in each of the first and second oxygen vacancy barrier layers is lower than a concentration of the oxygen vacancies in the ferroelectric layer.
9 more elements
Dependencies are inferred from the claim text.