Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies

A method of forming an integrated assembly, comprising:

• forming a stack of alternating first and second materials over a conductive structure;
• the conductive structure comprising a semiconductor-containing material over a metal-containing material;
• forming a trench to extend through the stack;
• at least some regions of the trench passing through the semiconductor-containing material to expose regions of the metal-containing material and to expose regions of the semiconductor-containing material proximate the exposed regions of the metal-containing material;
• implanting dopant into the exposed regions of the semiconductor-containing material;
• the implanted dopant comprising carbon and/or one or more metals;
• removing the second material of the stack to form voids;
• forming conductive material within the voids to form conductive regions of conductive levels of a memory device;
• and
• forming an insulative partition within the trench;
• the insulative partition dividing the memory device into sub-blocks.

An integrated assembly, comprising:

• a conductive structure comprising a semiconductor-containing material over a metal-containing material;
• the semiconductor-containing material comprising carbon therein to a concentration of at least about 1010 atoms/cm3;
• a stack of alternating conductive levels and insulative levels over the conductive structure;
• and
• a partition extending through the stack and partially into the conductive structure, at least some regions of the partition passing through the semiconductor-containing material and into the metal-containing material.