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US 11,056,501 B2Granted
Three-dimensional NAND memory device with source line comprising metallic and semiconductor layers
AssigneeToshiba Memory Corporation
InventorsHideo Wada, Hideto Takekida
Life of this patent
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Abstract
According to an embodiment, a memory device comprises a conductive layer containing a metal, a semiconductor layer on the conductive layer, electrode layers stacked on the semiconductor layer in a stacking direction, a semiconductor pillar penetrating the electrode layers in the stacking direction and electrically connected to the semiconductor layer, and a charge trap layer between the electrode layers and the semiconductor pillar. The conductive layer has a recess or a through-hole below the semiconductor pillar.
Claims16
A memory device, comprising:
- a conductive layer comprising a metal;
- a semiconductor layer on the conductive layer;
- a plurality of electrode layers stacked on the semiconductor layer in a stacking direction;
- a semiconductor pillar penetrating the plurality of electrode layers in the stacking direction and electrically connected to the semiconductor layer;
- and
- a charge trap layer located between the electrode layers and the semiconductor pillar, wherein
- the conductive layer has a recess or a through-hole that is directly below the semiconductor pillar in the stacking direction.
4 more elements
A memory device, comprising:
- a conductive layer comprising a metal;
- a semiconductor layer on the conductive layer;
- a plurality of electrode layers stacked on the semiconductor layer in a stacking direction;
- a semiconductor pillar penetrating the plurality of electrode layers in the stacking direction and electrically connected to the semiconductor layer;
- and
- a charge trap layer located between the electrode layers and the semiconductor pillar, wherein
- the conductive layer has a recess or a through-hole that is below the semiconductor pillar in the stacking direction, and
- the semiconductor layer includes a portion inside the recess or the through-hole.
5 more elements
Dependencies are inferred from the claim text.