Back to results
US 11,056,499 B2Granted
Semiconductor memory device
AssigneeSK hynix Inc.
InventorJae Taek Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device, with which a manufacturing method is associated, includes a substrate. The semiconductor memory device also includes a source structure disposed on a first region of the substrate, memory cell strings connected to the source structure, and a capacitor structure disposed on a second region of the substrate. The capacitor structure is spaced apart from the source structure in a horizontal direction.
Claims20
A semiconductor memory device comprising:
- a substrate;
- a source structure disposed on a first region of the substrate;
- memory cell strings connected to the source structure;
- and
- a capacitor structure disposed on a second region of the substrate,
- wherein the source structure is disposed between the first region of the substrate and each of the memory cell strings, and
- wherein the capacitor structure is spaced apart from the source structure in a horizontal direction.
4 more elements
A semiconductor memory device comprising:
- a substrate;
- a source structure disposed on a first region of the substrate;
- memory cell strings connected to the source structure;
- and
- a capacitor structure disposed on a second region of the substrate, wherein the capacitor structure is spaced apart from the source structure in a horizontal direction,
- wherein the capacitor structure comprises first and second conductive patterns with a sacrificial layer between the first and second conductive patterns.
3 more elements
A semiconductor memory device comprising:
- a substrate;
- interlayer insulating layers stacked on the substrate, wherein the interlayer insulating layers are spaced apart from each other;
- sacrificial insulating layers disposed between the interlayer insulating layers over a second region of the substrate;
- and
- a capacitor structure disposed between the substrate and a dummy stack structure,
- wherein the dummy stack structure comprises the interlayer insulating layers and the sacrificial insulating layers, and
- wherein the sacrificial insulating layers overlap the capacitor structure.
4 more elements
Dependencies are inferred from the claim text.