Integrated circuit devices including vertical field-effect transistors (VFETs)

A standard cell comprising:

• a first vertical field effect transistor (VFET) having a first conductivity type, wherein the first VFET comprises a first top source/drain region on a substrate, a first channel region between the first top source/drain region and the substrate, and a first bottom source/drain region in the substrate;
• a second VFET having a second conductivity type that is different from the first conductivity type, wherein the second VFET comprises a second top source/drain region on the substrate, a second channel region between the second top source/drain region and the substrate, and a second bottom source/drain region in the substrate;
• a conductive line that is electrically connected to the first bottom source/drain region and the second bottom source/drain region;
• and
• a bottom contact contacting both the first bottom source/drain region and the second bottom source/drain region, wherein the bottom contact is electrically connected to the conductive line.

A standard cell comprising:

• a first vertical field effect transistor (VFET) having a first conductivity type, wherein the first VFET comprises a first top source/drain region on a substrate, a first channel region between the first top source/drain region and the substrate, and a first bottom source/drain region in the substrate;
• a second VFET having a second conductivity type that is different from the first conductivity type, wherein the second VFET comprises a second top source/drain region on the substrate, a second channel region between the second top source/drain region and the substrate, and a second bottom source/drain region in the substrate;
• a conductive line that is electrically connected to the first top source/drain region and the second bottom source/drain region;
• a top contact contacting the first top source/drain region;
• and
• a bottom contact contacting the second bottom source/drain region,
• wherein the conductive line is electrically connected to the top contact and the bottom contact.