Metal-oxide-semiconductor device
AssigneeForce Mos Technology Co., Ltd.
InventorsKao-Way Tu, Yuan-Shun Chang
Life of this patent
Estimating the term…
Abstract
A metal-oxide-semiconductor (MOS) device comprising a heavily doped substrate, an epitaxial layer, an open, a plurality of MOS units, and a metal pattern layer is provided. The epitaxial layer is formed on the heavily doped substrate. The open is defined in the epitaxial layer to expose the heavily doped substrate. The MOS units are formed on the epitaxial layer. The metal pattern layer comprises a source metal pattern, a gate metal pattern, and a drain metal pattern. The source metal pattern and the gate metal pattern are formed on the epitaxial layer. The drain metal pattern fills in the open and is extended from the heavily doped substrate upward to above the epitaxial layer.
Claims9
A MOS device, comprising:
- a heavily doped substrate;
- an epitaxial layer, formed on the heavily doped substrate;
- an open, defined in the epitaxial layer to expose the heavily doped substrate;
- a plurality of MOS units, formed in the epitaxial layer;
- and
- a metal pattern layer, comprising:
- a source metal pattern, formed on the epitaxial layer;
- a gate metal pattern, formed on the epitaxial layer;
- and
- a drain metal pattern, deposited in the open and extended from the heavily doped substrate upward over the epitaxial layer,
- wherein the open is located at a corner of the epitaxial layer.
Dependencies are inferred from the claim text.