Single diffusion break local interconnect
AssigneeQUALCOMM Incorporated
InventorHaining Yang
Life of this patent
Estimating the term…
Abstract
Certain aspects of the present disclosure generally relate to a single diffusion break having a conductive portion. An example semiconductor device generally includes a first semiconductor region, a second semiconductor region, a dielectric region, and a single diffusion break (SDB). The dielectric region is disposed between the first semiconductor region and the second semiconductor region. The SDB intersects at least one of the first semiconductor region or the second semiconductor region, and the SDB comprises an electrically conductive portion.
Claims20
A semiconductor device, comprising:
- a first semiconductor region;
- a second semiconductor region;
- a dielectric region disposed between the first semiconductor region and the second semiconductor region, wherein the dielectric region comprises a shallow trench isolation (STI) region;
- and
- a single diffusion break (SDB) intersecting at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises an electrically conductive portion.
A semiconductor device, comprising:
- a first semiconductor region;
- a second semiconductor region;
- a dielectric region disposed between the first semiconductor region and the second semiconductor region;
- a single diffusion break (SDB) intersecting at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises:
- an electrically conductive portion disposed above the first semiconductor region and the second semiconductor region;
- and
- an insulator that intersects the first semiconductor region and the second semiconductor region;
- a conductive trace disposed above the first semiconductor region and the second semiconductor region, wherein the conductive trace is laterally spaced from the SDB;
- a first transistor comprising a portion of the first semiconductor region and a first segment of the conductive trace, wherein the first segment of the conductive trace is electrically coupled to the portion of the first semiconductor region and is a gate terminal of the first transistor;
- a second transistor comprising a portion of the second semiconductor region and a second segment of the conductive trace, wherein the second segment of the conductive trace is electrically coupled to the portion of the second semiconductor region and is a gate terminal of the second transistor;
- and
- an additional SDB intersecting the first semiconductor region and the second semiconductor region, wherein:
- the additional SDB is laterally spaced from the conductive trace;
- the additional SDB comprises an additional insulator that intersects the first semiconductor region and the second semiconductor region;
- and
- the first and second transistors are disposed between the SDB and the additional SDB.
A method of fabricating a semiconductor device, comprising:
- forming a dielectric region between a first semiconductor region and a second semiconductor region, wherein the dielectric region comprises a shallow trench isolation (STI) region;
- and
- forming a single diffusion break (SDB) that intersects at least one of the first semiconductor region or the second semiconductor region, wherein the SDB comprises an electrically conductive portion.
Dependencies are inferred from the claim text.