Semiconductor device having three-dimensional structure and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsHae Ri Kim, Tae Jun You, Ju Ry Song
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Abstract
A semiconductor device having a three-dimensional structure is disclosed herein. The semiconductor device includes a substrate. a first electrode line that extends in a first direction perpendicular to the substrate, a device pattern that extends from the first electrode line in a second direction parallel to the substrate, and a second electrode line connected to the device pattern. The device pattern may comprise at least one semiconductor layer pattern, where the at least one semiconductor layer pattern comprises an n-type dopant or a p-type dopant.
Claims14
A semiconductor device having a three-dimensional structure, semiconductor device comprising:
- a substrate;
- a first electrode line extending in a first direction perpendicular to the substrate;
- a device pattern extending from the first electrode line in a second direction parallel to the substrate;
- and
- a second electrode line connected to the device pattern,
- wherein the device pattern comprises at least one semiconductor layer pattern, the at least one semiconductor layer pattern comprising an n-type dopant or a p-type dopant, and
- wherein the second electrode line extends in a third direction that is not parallel to the first electrode line.
A semiconductor device having a three-dimensional structure, the semiconductor device comprising:
- a substrate;
- first electrode lines extending in a first direction perpendicular to the substrate;
- device patterns and interlayer insulating layers, which are alternately stacked on the substrate in the first direction;
- and
- second electrode lines disposed on the same plane as the device patterns,
- wherein the device patterns extend from the first electrode lines in a second direction parallel to the substrate and are connected to the second electrode lines, each of the device patterns comprising at least one doped semiconductor layer pattern, and
- wherein the second electrode lines extend in a third direction that is not parallel to the first electrode lines.
Dependencies are inferred from the claim text.