Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsTimothy E. Boles, Wayne Mack Struble
Life of this patent
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Abstract
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Claims22
An integrated circuit, comprising:
- a first region of the integrated circuit, the first region containing a p-i-n or n-i-p semiconductor diode formed on a substrate from a first semiconductor material of a first base elemental composition that is common with the substrate;
- a second region of the integrated circuit, the second region containing a transistor formed on the substrate from gallium-nitride material, the composition of the gallium-nitride material being different than the first semiconductor material of the first base elemental composition and the substrate;
- and
- a third region of the integrated circuit containing an electrically-insulating dielectric material that extends through the substrate and separates the substrate between the first region and the second region.
A method of making a heterolithic microwave integrated circuit, the method comprising:
- forming a first semiconductor device from a first semiconductor material in a first region of a wafer;
- forming a second semiconductor material on the first semiconductor material in a second region of the wafer, the second semiconductor material having a different base elemental composition than the first semiconductor material;
- forming a second semiconductor device from the second semiconductor material;
- etching a cavity in a third region of the wafer;
- filling the cavity with an electrically-insulating material;
- planarizing the electrically-insulating material;
- and
- removing a portion of a backside of the wafer to expose the electrically-insulating material.
A packaged integrated circuit, comprising:
- an enclosure;
- and
- an integrated circuit within the enclosure, the integrated circuit comprising:
- a first region of the integrated circuit, the first region containing a p-i-n or n-i-p semiconductor diode formed on a substrate from a first semiconductor material of a first base elemental composition that is common with the substrate;
- a second region of the integrated circuit, the second region containing a transistor formed on the substrate from gallium-nitride material, the composition of the gallium-nitride material being different than the first semiconductor material of the first base elemental composition and the substrate;
- and
- a third region of the integrated circuit containing an electrically-insulating dielectric material that extends through the substrate and separates the substrate between the first region and the second region.
Dependencies are inferred from the claim text.