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US 11,056,480 B2Granted
Method of forming a TVS semiconductor device
AssigneeSemiconductor Components Industries, LLC
InventorsYupeng Chen, Steven M. Etter, Umesh Sharma
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Abstract
In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.
Claims10
A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:
- forming a P-N diode connected in parallel between a collector and an emitter of a bipolar transistor wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor;
- and
- forming a thickness of a first current carrying electrode of the P-N diode to be greater than a total thickness of the base of the bipolar transistor wherein a reverse breakdown voltage of the P-N diode is to be greater than an open base collector-to-emitter breakdown voltage of the bipolar transistor (BVeco).
A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:
- forming a P-N diode connected in parallel between a collector and an emitter of a bipolar transistor wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor;
- and
- forming a thickness of a first current carrying electrode of the P-N diode to be greater than a thickness of the base of the bipolar transistor including forming the base as a first doped region having a first doping concentration and forming the emitter as a second doped region having a second doping concentration that is less than the first doping concentration wherein the second doped region overlies the first doped region wherein a reverse breakdown voltage of the P-N diode is to be greater than an open base collector-to-emitter breakdown voltage of the bipolar transistor (BVeco).
A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:
- providing a substrate of a first conductivity type;
- forming a doped region of a second conductivity type on the substrate;
- forming at least a portion of a bipolar transistor in a first portion of the doped region wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor, and wherein a collector-base junction of the bipolar transistor is formed at an interface between the substrate and the first portion of the doped region;
- forming a least a portion of a diode in a second portion of the doped region wherein a total thickness of the second portion is substantially the same as a total thickness of the first portion, and wherein a P-N junction of the diode is formed at an interface between the substrate and the second portion of the doped region;
- and
- forming the diode connected in parallel between a collector and an emitter of the bipolar transistor.
3 more elements
Dependencies are inferred from the claim text.