3D semiconductor device and structure

A 3D semiconductor device, the device comprising:

• a first die comprising first transistors and a first interconnect;
• a second die comprising second transistors and a second interconnect;
• and
• a third die comprising third transistors and a third interconnect,
• wherein said first die is overlaid by said second die,
• wherein said first die is overlaid by said third die,
• wherein said second die is bonded to said first die,
• wherein said bonded comprises hybrid bonding,
• wherein said second die comprises an array of memory cells,
• wherein said first die comprises a control logic,
• wherein said second die is aligned to said first die with less than 800 nm alignment error,
• wherein said first die comprises at least two first alignment marks positioned close to a first die edge of said first die,
• wherein said second die comprises at least two second alignment marks positioned close to a second die edge of said second die, and
• wherein said third die is bonded to said first die.

A 3D semiconductor device, the device comprising:

• a first die comprising first transistors and a first interconnect;
• a second die comprising second transistors and a second interconnect;
• and
• a third die comprising third transistors and a third interconnect,
• wherein said first die is overlaid by said second die,
• wherein said first die is overlaid by said third die,
• wherein said first die has a first die area and said second die has a second die area,
• wherein said first die area is at least 20% larger than said second die area,
• wherein said second die is pretested,
• wherein said second die is bonded to said first die,
• wherein said bonded comprises metal to metal bonding,
• wherein said first die comprises at least two first alignment marks positioned close to a first die edge of said first die,
• wherein said second die is aligned to said first die with less than 800 nm alignment error,
• wherein said second die comprises at least two second alignment marks positioned close to a second die edge of said second die, and
• wherein said third die is bonded to said first die.