Semiconductor device manufacturing method and semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorKeita Matsuda
Life of this patent
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Abstract
A semiconductor device manufacturing method includes forming an organic insulating layer on a semiconductor on which metal wiring is provided, the organic insulating layer having an opening to expose part of the metal wiring, forming a seed metal covering the part of the metal wiring exposed from the opening, and an inside face and an around portion of the opening of the organic insulating layer, forming a mask covering an edge of the seed metal and exposing part of the seed metal formed in the opening, and forming a barrier metal on the seed metal exposed from the mask by electroless plating. The mask includes an organic material or an inorganic dielectric material.
Claims14
A semiconductor device manufacturing method comprising:
- forming an organic insulating layer on a semiconductor on which metal wiring is provided, the organic insulating layer having an opening to expose a part of the metal wiring;
- forming a seed metal covering the part of the metal wiring exposed from the opening, an inside face of the organic insulating layer in the opening, and a portion of the organic insulating layer around the opening;
- forming a mask covering an edge of the seed metal while exposing part of the seed metal formed in the opening, the mask including an inorganic dielectric material;
- forming a barrier metal on the seed metal exposed from the mask by electroless plating;
- without removing the mask, forming a solder ball on the barrier metal;
- and
- reflowing the solder ball on the barrier metal and the mask.
A semiconductor device manufacturing method comprising:
- forming an organic insulating layer on a semiconductor on which metal wiring is provided, the organic insulating layer having a first opening to expose a part of the metal wiring;
- forming a seed metal layer covering the part of the metal wiring exposed from the first opening, an inside face of the organic insulating layer in the first opening, and a portion of the organic insulating layer around the first opening;
- forming a mask covering an edge of the seed metal layer and the organic insulating layer, the mask having a second opening to expose part of the seed metal layer;
- forming a barrier metal layer on the seed metal layer exposed from the second opening of the mask, the barrier metal layer being separated from the organic insulating layer;
- without removing the mask, forming a solder ball on the barrier metal;
- and
- reflowing the solder ball on the barrier metal layer and the mask.
Dependencies are inferred from the claim text.