Power module having at least one power semiconductor

A power module, comprising:

• a substrate including a first layer and a second layer which is arranged above the first layer, said first and second layers being connected to one another, said first layer comprising a first dielectric material having a metallization arranged on a side facing the second layer, said second layer comprising a second dielectric material having a metallization arranged on a side facing away from the metallization of the first dielectric material;
• and
• a power semiconductor having a first contact area and a second contact area opposite the first contact area, said power semiconductor being connected to the metallization of the first dielectric material via the first contact area and arranged in a first recess of the second layer;
• and
• a metallic first encapsulation configured to encapsulate the power semiconductor in a fluid-tight manner, said second contact area of the power semiconductor being electrically conductively connected to the metallization of the second dielectric material via the first encapsulation.